PART |
Description |
Maker |
GVT71256D36B-5 GVT71256D36T-5 GVT71256D36T-4.4 GVT |
256K x 36 pipelined SRAM, 200MHz 256K x 36 pipelined SRAM, 225MHz 256K x 36 pipelined SRAM, 150MHz 256K x 36 pipelined SRAM, 166MHz 512K x 18 pipelined SRAM, 225MHz 512K x 18 pipelined SRAM, 150MHz 512K x 18 pipelined SRAM, 166MHz 512K x 18 pipelined SRAM, 200MHz
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Cypress
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IDT709149S 709149_DS_24983 IDT709149S8PF IDT709149 |
4K x 9 Sync, Dual-Port RAM, Pipelined HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM From old datasheet system
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IDT[Integrated Device Technology]
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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IDT70V9189L9PFI IDT70V9179L12PFI IDT70V9179L6PFI I |
64K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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IDT[Integrated Device Technology]
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IDT70T9169L 70T9169_DS_34849 IDT70T9159L IDT70T916 |
8K x 9 Sync,2.5V Dual-Port RAM, PipeLined/Flow-Through From old datasheet system HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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IDT[Integrated Device Technology]
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IDT70V9359L9PFI IDT70V9349 IDT70V9349L IDT70V9349L |
8K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through 4K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through HIGH-SPEED 3.3V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 8K X 18 DUAL-PORT SRAM, 15 ns, PQFP100
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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IDT709199L12PF IDT709199L12PFI IDT709199L7PF IDT70 |
From old datasheet system HIGH-SPEED 128K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 128K x 9, Sync, Dual-Port RAM, PipeLined/FLow-Through
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IDT[Integrated Device Technology]
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GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
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GSI Technology
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CY7C1460AV25 CY7C1462AV25 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
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Cypress Semiconductor Corp.
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CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
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Cypress Semiconductor Corp.
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